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ST 2SC1959
NPN Silicon Epitaxial Planar Transistor for switching, driver stage and audio frequency low power amplifier applications. The transistor is subdivided into three groups, O, Y and G, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
TO-92 Plastic Package Weight approx. 0.19g
Absolute Maximum Ratings (Ta = 25 oC) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC IB Ptot Tj TS Value 35 30 5 500 100 500 150 -55 to +150 Unit V V V mA mA mW
O O
C C
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 07/12/2002
ST 2SC1959
Characteristics at Tamb=25 oC Symbol DC Current Gain at VCE=1V, IC=100mA Current Gain Group O Y G at VCE=6V, IC=400mA Base Emitter Voltage at IC=100mA, VCE=1V Emitter Cutoff Current at VEB=5V Collector Cutoff Current at VCB=35V Collector Saturation Voltage at IC=100mA, IB=10mA Transition Frequency at VCE=6V, IC=20mA Output Capacitance at VCB=6V, f=1MHz COB 7 pF fT 300 MHz VCE(sat) 0.1 0.25 V ICBO 0.1 A IEBO 0.1 A VBE 0.8 1 V hFE hFE hFE hFE 70 120 200 25 140 240 400 Min. Typ. Max. Unit
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
(R)
Dated : 07/12/2002

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